SOURCE/DRAIN FINFET CHANNEL STRESSOR STRUCTURE

摘要

A semiconductor structure includes a material stack of, from bottom to top, an insulator structure and a semiconductor fin portion located on a pedestal portion of a semiconductor substrate portion, wherein a doped epitaxial semiconductor material structure extends from each sidewall surface of the semiconductor fin portion, each doped epitaxial semiconductor material structure introduces a stress on the semiconductor fin portion. A gate structure straddles the semiconductor fin portion. A source-side stressor structure having a bottommost surface contacting a first subsurface of the semiconductor substrate portion and covering one of the doped epitaxial semiconductor material structure is located on a source-side of the gate structure. A drain-side stressor structure having a bottommost surface contacting a second subsurface of the semiconductor substrate portion and covering another of the doped epitaxial semiconductor material structure is located on a drain-side of the gate structure.

主权项

1. A semiconductor structure comprising:
a material stack of, from bottom to top, an insulator structure and a semiconductor fin portion located on a pedestal portion of a semiconductor substrate portion, wherein a doped epitaxial semiconductor material structure extends from each sidewall surface of said semiconductor fin portion, each doped epitaxial semiconductor material structure introduces a stress on said semiconductor fin portion; a gate structure straddling said semiconductor fin portion; a source-side stressor structure contacting a first subsurface of said semiconductor substrate portion and covering one of said doped epitaxial semiconductor material structures located on a source-side of the gate structure; and a drain-side stressor structure contacting a second subsurface of said semiconductor substrate portion and covering another of said doped epitaxial semiconductor material structures located on a drain-side of the gate structure.