发明名称 INCREASED REFRESH INTERVAL AND ENERGY EFFICIENCY IN A DRAM
摘要 Techniques described herein generally include methods and systems related to designing and operating a DRAM device that has significantly reduced refresh energy use. A method for designing a DRAM optimizes or otherwise improves the DRAM for energy efficiency based on a measured or predicted failure probability of memory cells in the DRAM. The DRAM may be configured to operate at an increased refresh interval, thereby reducing DRAM refresh energy but causing a predictable portion of the memory cells in the DRAM to leak electrical energy too quickly to retain data. The DRAM is further configured with a selected number of spare memory cells for replacing the “leaky” memory cells, so that operation of the DRAM at the increased refresh interval may result in little or no reduction in capacity of the DRAM.
申请公布号 US2017116058(A1) 申请公布日期 2017.04.27
申请号 US201715401114 申请日期 2017.01.09
申请人 Empire Technology Development LLC 发明人 Solihin Yan
分类号 G06F11/00;G11C11/4074;G11C11/406 主分类号 G06F11/00
代理机构 代理人
主权项 1. A method to design a memory chip, the method comprising: determining a failure probability of a portion of a volatile memory array for a first refresh interval for the volatile memory array, the portion of the volatile memory array including a plurality of memory cells; determining a second refresh interval for the volatile memory array based at least in part on the determined failure probability; and determining a number of spare memory cells to be included in the volatile memory array based at least in part on the determined second refresh interval.
地址 Wilmington DE US