发明名称 POWER SEMICONDUCTOR MODULE AND METHOD FOR STABILIZING THEREOF
摘要 Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.
申请公布号 US2017117889(A1) 申请公布日期 2017.04.27
申请号 US201615223826 申请日期 2016.07.29
申请人 Electronics and Telecommunications Research Institute 发明人 KIM Minki;JANG Hyun-Gyu;JUNG Dong Yun;KO Sang Choon;LEE Hyun Soo;JUN Chi Hoon
分类号 H03K17/081;H01L27/088;H01L29/20;H01L29/778 主分类号 H03K17/081
代理机构 代理人
主权项 1. A power semiconductor module comprising: a depletion-mode field effect transistor comprising a gate, a drain, and a source, the depletion-mode field effect transistor being served as a main transistor for power switching; a sense field effect transistor configured to share the gate and the drain of the depletion-mode field effect transistor, the sense field effect transistor having current driving ability less than that of the depletion-mode field effect transistor; an enhancement-mode field effect transistor configured to connect the drain to a floating node that is the source of the depletion-mode field effect transistor so as to form a cascode structure, the enhancement-mode field effect transistor being configured to drive the depletion-mode field effect transistor; a first stabilizing circuit connected between the floating node and a source of the sense field effect transistor to perform voltage stabilization of the floating node; and a second stabilizing circuit connected between a source of the enhancement-mode field effect transistor and the source of the sense field effect transistor to perform voltage stabilization of the floating node.
地址 Daejeon KR