发明名称 CAPACITANCE DETECTING SENSORS AND RELATED DEVICES AND SYSTEMS
摘要 Capacitance detecting circuit is disclosed for fingerprint sensing and other applications. The capacitance detecting circuit includes a first capacitor, an integrator, a second capacitor, a comparator, and a counter. The integrator can generate an integrating output voltage and includes a first single-ended amplifier and at least one integration capacitor. The first single-ended amplifier includes a first input terminal and an integrating output terminal. The comparator can generate a comparing output and include a negative input terminal coupled to the integrating output terminal of the first single-ended amplifier, a positive input terminal to receive a reference voltage, and a comparing output terminal to output the comparing output voltage. The counter is coupled to the comparing output terminal and can generate a counter output. A connection between the second capacitor and the first input terminal is controlled to be conducted or cutoff according to the comparing output.
申请公布号 US2017116452(A1) 申请公布日期 2017.04.27
申请号 US201615333005 申请日期 2016.10.24
申请人 Shenzhen Huiding Technology Co., Ltd. 发明人 Wang Chung-Yi;Yang Meng-Ta
分类号 G06K9/00 主分类号 G06K9/00
代理机构 代理人
主权项 1. A capacitance detecting circuit, comprising: a pixel sensing circuit that includes a sensing conducting layer that interfaces with an object to form a capacitance with the object; a first capacitor coupled to the pixel sensing circuit; an integrator electrically coupled to the first capacitor and configured to generate an integrating output voltage, the integrator including: a first single-ended amplifier, including: an integrating output terminal configured to output the integrating output voltage, anda first input terminal coupled to the first capacitor, andat least one integration capacitor coupled to the first input terminal; and a comparator coupled to the integrating output terminal of the first single-ended amplifier and configured to generate a comparing output voltage indicative of the capacitance between the sensing conducting layer and the object.
地址 Shenzhen CN