ERROR LOCATION POINTERS FOR NVM

摘要

Embodiments of the present disclosure generally relate to an improved method and system for error correction in non-volatile memory cells. The method includes writing data to a first location in non-volatile memory from a block of user data stored in DRAM and verifying the written data matches the block of user data. If the written data fails verification, the method further includes writing an error location pointer indicative of one or more error locations in the first location to a second location in non-volatile memory. Writing the one or more error locations to the error location pointer includes verifying the written error location pointer matches an address of the one or more error locations in the first location to ensure integrity of the error location pointer. Use of the error location pointer results in non-volatile memory with increased data rate, decreased read latency and a low probability of data loss.

主权项

1. An error correction method for non-volatile memory, comprising:
writing data to a first location in the non-volatile memory from a block of user data stored in DRAM; verifying that the written data matches the block of user data store in DRAM; and if the written data fails verification, writing an error location pointer indicative of one or more error locations in the first location to a second location in the non-volatile memory, wherein writing of the one or more error locations to the error location pointer includes verifying that the written error location pointer matches an address of the one or more error locations in the first location to ensure integrity of the error location pointer.