| 发明名称 |
CONFORMAL DOPING FOR PUNCH THROUGH STOPPER IN FIN FIELD EFFECT TRANSISTOR DEVICES |
| 摘要 |
A method of forming a punch through stop region that includes forming isolation regions of a first dielectric material between adjacent fin structures and forming a spacer of a second dielectric material on sidewalls of the fin structure. The first dielectric material of the isolation region may be recessed with an etch process that is selective to the second dielectric material to expose a base sidewall portion of the fin structures. Gas phase doping may introduce a first conductivity type dopant to the base sidewall portion of the fin structure forming a punch through stop region underlying a channel region of the fin structures. |
| 申请公布号 |
US2017117365(A1) |
申请公布日期 |
2017.04.27 |
| 申请号 |
US201615358661 |
申请日期 |
2016.11.22 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Bu Huiming;Kanakasabapathy Sivananda K.;Lie Fee Li;Yamashita Tenko |
| 分类号 |
H01L29/10;H01L29/66;H01L29/08;H01L21/223;H01L21/324;H01L29/78;H01L29/06 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device comprising:
forming a spacer of a dielectric material on sidewalls of fin structures; exposing a portion of the fin structures underlying the spacer of the dielectric material; and doping the exposed portion of the fin structures underlying the spacer with a dopant having a first conductivity type to form a punch through stop region. |
| 地址 |
Armonk NY US |
