ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: interlayer insulating layers and conductive first base layer patterns that are alternatively stacked over a substrate; a dielectric second base layer pattern that is in contact with sidewalls of the interlayer insulating layers; first electrodes that are in contact with sidewalls of the first base layer patterns; a second electrode disposed over outer sidewalls of the first electrodes; and a variable resistance layer pattern interposed between the first electrodes and the second electrode. Each of the first electrodes comprises an alloy that includes first and second elements. The first element is included in the first base layer patterns and the second element is included in the second base layer pattern.

主权项

1. An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:
interlayer insulating layers and conductive first base layer patterns that are alternatively stacked over a substrate; a dielectric second base layer pattern that is in contact with sidewalls of the interlayer insulating layers; first electrodes that are in contact with sidewalls of the first base layer patterns; a second electrode disposed over outer sidewalls of the first electrodes; and a variable resistance layer pattern interposed between the first electrodes and the second electrode, wherein each of the first electrodes comprises an alloy that includes first and second elements, the first element being included in the first base layer patterns, and the second element being included in the second base layer pattern.