发明名称 Tipless Transistors, Short-Tip Transistors, and Methods and Circuits Therefor
摘要 An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.
申请公布号 US2017117273(A1) 申请公布日期 2017.04.27
申请号 US201715398447 申请日期 2017.01.04
申请人 Mie Fujitsu Semiconductor Limited 发明人 Kidd David A.
分类号 H01L27/088;H01L29/78;H03L7/08;G11C7/06;H03K5/06;H03K3/356;G11C7/08;H01L29/10;H03L7/081 主分类号 H01L27/088
代理机构 代理人
主权项
地址 Kuwana JP
您可能感兴趣的专利