REDISTRIBUTION LAYER STRUCTURE, SEMICONDUCTOR SUBSTRATE STRUCTURE, SEMICONDUCTOR PACKAGE STRUCTURE, CHIP STRUCTURE, AND METHOD OF MANUFACTURING THE SAME

摘要

The present disclosure relates to redistribution layer structures useful in semiconductor substrate packages, semiconductor package structures, and chip structures. In an embodiment, a redistribution layer structure includes a dielectric layer, an anti-plating layer, and a conductive material. The dielectric layer defines one or more trenches. The conductive material is disposed in the trench(es), and the anti-plating layer is disposed on a surface of the dielectric layer.

主权项

1. A redistribution layer structure, comprising:
a dielectric layer comprising an upper portion and a lower portion, the lower portion of the dielectric layer defining at least one trench, and the upper portion of the dielectric layer comprising an anti-plating layer disposed on a surface of the lower portion of the dielectric layer and defining an opening; and a conductive material plated in the trench within the opening, wherein the anti-plating layer does not extend over the trench.