发明名称 |
SEMICONDUCTOR DEVICE PACKAGES WITH IMPROVED THERMAL MANAGEMENT AND RELATED METHODS |
摘要 |
Semiconductor device packages in accordance with this disclosure may include a substrate and a stack of semiconductor dice attached to the substrate. An uppermost semiconductor die of the stack of semiconductor dice located on a side of the stack of semiconductor dice opposite the substrate may be a heat-generating component configured to generate more heat than each other semiconductor die of the stack of semiconductor dice. Electrical connectors may extend directly from the uppermost semiconductor die to the substrate. A heat sink may be located on a side of the uppermost semiconductor die opposite the substrate. A passivation material may be located between the uppermost semiconductor die and the heat sink. |
申请公布号 |
US2017117205(A1) |
申请公布日期 |
2017.04.27 |
申请号 |
US201715401762 |
申请日期 |
2017.01.09 |
申请人 |
Micron Technology, Inc. |
发明人 |
Groothuis Steven;Li Jian;Luo Shijian |
分类号 |
H01L23/367;H01L21/48;H01L23/48;H01L25/065;H01L21/56 |
主分类号 |
H01L23/367 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device package, comprising:
a substrate; a stack of semiconductor dice attached to the substrate, an uppermost semiconductor die of the stack of semiconductor dice located on a side of the stack of semiconductor dice opposite the substrate being a heat-generating component configured to generate more heat than each other semiconductor die of the stack of semiconductor dice; electrical connectors extending directly from the uppermost semiconductor die to the substrate; a heat sink located on a side of the uppermost semiconductor die opposite the substrate; and a passivation material located between the uppermost semiconductor die and the heat sink. |
地址 |
Boise ID US |