SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes a first word line and a second word line extending abreast of each other in a first direction. A bit line extends between the first word line and the second word line in a second direction intersecting the first direction. A lower electrode is formed on one surface of the first word line. An ovonic threshold switch (OTS) is formed on the lower electrode. An intermediate electrode is formed on the OTS. A phase change memory (PCM) is formed on the intermediate electrode, and an upper electrode is formed between the first PCM and a surface of the bit line. The width of the first upper electrode in the second direction is narrower than the width of the first intermediate electrode in the second direction.

主权项

1. A semiconductor device comprising:
a first word line and a second word line extending abreast of each other in a first direction; a bit line extending between the first word line and the second word line in a second direction intersecting the first direction; a first lower electrode formed on one surface of the first word line; a first ovonic threshold switch (OTS) formed on the first lower electrode; a first intermediate electrode formed on the first OTS; a first phase change memory (PCM) formed on the first intermediate electrode; a first upper electrode formed between the first PCM and a surface of the bit line, wherein the width of the first upper electrode in the second direction is narrower than the width of the first intermediate electrode in the second direction; a second lower electrode formed on another surface of the bit line; a second OTS formed on the second lower electrode; a second intermediate electrode formed on the second OTS; a second PCM formed on the second intermediate electrode; and a second upper electrode formed between the second PCM and the second word line, wherein the width of the first upper electrode in the first direction is narrower than the width of the second intermediate electrode in the first direction.