发明名称 |
Semiconductor Device Having Features to Prevent Reverse Engineering |
摘要 |
An electronic device includes: a base layer; a first layer located at least partially over the base layer; a second layer located at least partially over the first layer; a first metal layer located at least partially over the second layer, wherein one or more signal outputs of the electronic device are formed in the first metal layer; and a second metal layer located at least partially over the first metal layer, wherein one or more gate connection is formed in the second metal layer, wherein removing a portion of the second metal layer disrupts at least one gate connection and deactivates the device. |
申请公布号 |
US2017117234(A1) |
申请公布日期 |
2017.04.27 |
申请号 |
US201615287288 |
申请日期 |
2016.10.06 |
申请人 |
Verisiti, Inc. |
发明人 |
Thacker, III William Eli |
分类号 |
H01L23/00;H01L29/788;H01L23/528;H01L27/11524 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. An electronic device comprising:
a base layer; a first layer located at least partially over the base layer; a second layer located at least partially over the first layer; a first metal layer located at least partially over the second layer, wherein one or more signal outputs of the electronic device are formed in the first metal layer; and a second metal layer located at least partially over the first metal layer, wherein one or more gate connection is formed in the second metal layer, wherein removing a portion of the second metal layer disrupts at least one gate connection and deactivates the device. |
地址 |
Sanford NC US |