FIN STRUCTURE OF FIN FIELD EFFECT TRANSISTOR

摘要

An exemplary method of forming a fin field effect transistor that includes first and second etching processes to form a fin structure. The fin structure includes an upper portion and a lower portion separated at a transition. The upper portion has sidewalls that are substantially perpendicular to the major surface of the substrate. The lower portion has tapered sidewalls on opposite sides of the upper portion and a base having a second width larger than the first width.

主权项

1. A method of fabricating a semiconductor device comprising:
forming a patterned hard mask layer over a substrate; using the patterned hard mask layer as a masking element during a first etch process of the substrate to form an upper portion of a fin structure; thereafter, using the patterned hard mask layer as the masking element during a second etch process of the substrate, wherein the second etch process includes at least one parameter different than the first etch process; and forming a dielectric layer adjacent the fin structure, wherein a top surface of the dielectric layer is coplanar with the upper portion of the fin structure.