发明名称 THREE DIMENSIONAL NON-VOLATILE MEMORY WITH SHORTING SOURCE LINE/BIT LINE PAIRS
摘要 A non-volatile storage system dedicates a subset of blocks to be used for shorting source lines to bit lines at periodic positions along the bit lines during certain memory operations.
申请公布号 US2017117037(A1) 申请公布日期 2017.04.27
申请号 US201615299372 申请日期 2016.10.20
申请人 SANDISK TECHNOLOGIES LLC 发明人 Mokhlesi Nima
分类号 G11C11/56;G11C16/34;G11C16/04 主分类号 G11C11/56
代理机构 代理人
主权项 1. An apparatus, comprising: a plurality of non-volatile memory cells; a first bit line connected to a first memory cell; a first source line connected to the first bit line by way of the first memory cell; and a control circuit connected to the first source line and the first bit line, the control circuit configured to perform a programming process for the first memory cell, the programming process comprising a programming phase and a verify phase, the control circuit further configured to couple the first bit line to the first source line during the programming phase by operating a set of the memory cells to form an electrical path between the first source line and the first bit line.
地址 Plano TX US