发明名称 METHOD FOR PRODUCING SILICON NANOWIRES
摘要 A method for producing a material based on silicon nanowires is provided. The method includes the steps of: i) bringing into contact, in an inert atmosphere, a sacrificial support based on a halogenide, a carbonate, a sulfate or a nitrate of an alkali metal, an alkaline earth metal or a transition metal having metal nanoparticles, with the pyrolysis vapours of a silicon source having a silane compound, by which silicon nanowires are deposited on the sacrificial support; and optionally ii) eliminating the sacrificial support and recovering the silicon nanowires produced in step ii).
申请公布号 US2017114454(A1) 申请公布日期 2017.04.27
申请号 US201515316913 申请日期 2015.06.12
申请人 Commissariat A L'energie Atomique Et Aux Energies Alternatives 发明人 Chenevier Pascale;Reiss Peter;Burchak Olga
分类号 C23C16/24;C23C16/01;C23C16/44;H01G11/30;H01M10/0525;C30B25/00;C30B29/06;C30B29/62;C01B33/029;H01M4/38 主分类号 C23C16/24
代理机构 代理人
主权项 1. A process for the preparation of a material based on silicon nanowires, comprising the stages of: i) bringing a sacrificial support based on an alkali metal, alkaline earth metal or transition metal halide, carbonate, sulfate or nitrate, comprising metal nanoparticles, on the one hand, into contact, under an inert atmosphere, with the pyrolysis vapors from a silicon source comprising a silane compound, on the other hand, whereby silicon nanowires deposited on said sacrificial support are obtained; and optionally ii) removing the sacrificial support and recovering the silicon nanowires obtained in stage ii).
地址 Paris FR