High voltage junctionless field effect device and its method of fabrication

摘要

A structure and a method of fabrication are disclosed of a high voltage junctionless field effect device. A channel layer and a barrier layer are formed sequentially underneath the gate structure. The width of energy band gap of the barrier layer is wider than that of the channel layer. Thus the two dimensional electron gas (2-DEG) generated in the interface between the channel layer and the barrier layer of this junctionless field effect device has higher electron mobility. The structure of the device of this disclosure has a higher breakdown voltage which is advantageous for a high voltage junctionless field device. The structure offers advantages in device performance and reliability.

主权项

1. A method for forming a high-voltage non-junction field effect device, the method comprising the steps of:
providing a substrate; forming a fin-shaped structure on the substrate; sequentially forming on a surface of the fin-shaped structure of a channel layer, a barrier layer, a gate dielectric layer and a metal layer, wherein an energy band gap energy of the barrier layer is greater than a width of the channel layer; etching the metal layer and the gate dielectric layer to form a gate structure; forming spacers on both sides of the gate structure; forming source and drain on side walls on both sides of the barrier layer.