| 发明名称 |
Bipolar SCR |
| 摘要 |
A high-voltage bipolar semiconductor controlled rectifier (SCR) includes an emitter region having a first polarity and overlying a base region having a second polarity different from the first polarity; a collector region having the first polarity and lying under the base region; an anode region having the second polarity; a first sinker region having the first polarity and contacting the collector region, wherein the anode region is between the first sinker region and the base region; and a second sinker region having the first polarity and contacting the collector region, the second sinker region lying between the anode region and the base region, wherein an extension of the anode region extends under a portion of the second sinker region. |
| 申请公布号 |
US9633993(B1) |
申请公布日期 |
2017.04.25 |
| 申请号 |
US201615088681 |
申请日期 |
2016.04.01 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Appaswamy Aravind C;Phillips Stanley |
| 分类号 |
H01L29/74;H01L27/02;H01L29/08;H01L29/10;H01L29/417;H01L23/535;H01L29/06;H01L29/36;H01L29/747 |
主分类号 |
H01L29/74 |
| 代理机构 |
|
代理人 |
Garner Jacqueline J.;Brill Charles A.;Cimino Frank D. |
| 主权项 |
1. A high-voltage bipolar semiconductor controlled rectifier (SCR) comprising:
an emitter region having a first polarity and overlying a base region having a second polarity different from the first polarity; a collector region having the first polarity and lying under the base region; an anode region having the second polarity; a first sinker region having the first polarity and contacting the collector region, wherein the anode region is between the first sinker region and the base region; and a second sinker region having the first polarity and contacting the collector region, the second sinker region lying between the anode region and the base region, wherein an extension of the anode region extends under a portion of the second sinker region. |
| 地址 |
Dallas TX US |
