Resistive memory devices and methods of controlling resistive memory devices according to selected pulse power specifications

摘要

A method of controlling a resistive memory device includes: accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array; generating a first pulse power according to the accessed first pulse power specification; and performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power.

主权项

1. A method of controlling a resistive memory device, the method comprising:
accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array; generating a first pulse power according to the accessed first pulse power specification; and performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power; wherein
a second of the plurality of memory cells has a different memory cell coefficient relative to the first of the plurality of memory cells, andthe performing the write operation includes performing the write operation on the first of the plurality of memory cells and the second of the plurality of memory cells by using pulse powers corresponding to different memory cell coefficients.