发明名称 |
Array substrate and manufacturing method thereof |
摘要 |
An array substrate and a manufacturing method thereof are provided. The method has steps of: forming a black matrix layer having a plurality of black matrixes on a substrate; forming a switch array layer having a plurality of thin-film transistors on the black matrix layer; forming a color resist layer having a plurality of color resists on the switch array layer; and forming a transparent conductive layer on the color resist layer. |
申请公布号 |
US9634030(B2) |
申请公布日期 |
2017.04.25 |
申请号 |
US201514771042 |
申请日期 |
2015.07.20 |
申请人 |
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
Ye Chengliang |
分类号 |
H01L27/12;G02F1/1362 |
主分类号 |
H01L27/12 |
代理机构 |
Ladas & Parry LLP |
代理人 |
Ladas & Parry LLP |
主权项 |
1. A manufacturing method of an array substrate, comprising steps of:
forming a black matrix layer on a substrate, wherein the black matrix layer comprises a plurality of black matrixes; forming a first insulation layer on the black matrix layer; forming a switch array layer on the first insulation layer, wherein the switch array layer comprises a plurality of thin-film transistors; forming a color resist layer on the switch array layer, wherein the color resist layer comprises a plurality of color resists; each of the color resists has a pervious area which is a color display area of a colored pixel with edges of the pixel's display area being optically discernable by being arranged in an end-product display wherein the display area is pervious to light through the color resist in that area in operation; and an interval between the black matrix layer and a minimum distance edge of the pervious area of the corresponding color resist is at least 2 micrometers, wherein the minimum distance edge is an edge of the corresponding color resist closest to the black matrix layer; and forming a transparent conductive layer on the color resist layer. |
地址 |
Shenzhen, Guangdong CN |