发明名称 Array substrate and manufacturing method thereof
摘要 An array substrate and a manufacturing method thereof are provided. The method has steps of: forming a black matrix layer having a plurality of black matrixes on a substrate; forming a switch array layer having a plurality of thin-film transistors on the black matrix layer; forming a color resist layer having a plurality of color resists on the switch array layer; and forming a transparent conductive layer on the color resist layer.
申请公布号 US9634030(B2) 申请公布日期 2017.04.25
申请号 US201514771042 申请日期 2015.07.20
申请人 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 Ye Chengliang
分类号 H01L27/12;G02F1/1362 主分类号 H01L27/12
代理机构 Ladas & Parry LLP 代理人 Ladas & Parry LLP
主权项 1. A manufacturing method of an array substrate, comprising steps of: forming a black matrix layer on a substrate, wherein the black matrix layer comprises a plurality of black matrixes; forming a first insulation layer on the black matrix layer; forming a switch array layer on the first insulation layer, wherein the switch array layer comprises a plurality of thin-film transistors; forming a color resist layer on the switch array layer, wherein the color resist layer comprises a plurality of color resists; each of the color resists has a pervious area which is a color display area of a colored pixel with edges of the pixel's display area being optically discernable by being arranged in an end-product display wherein the display area is pervious to light through the color resist in that area in operation; and an interval between the black matrix layer and a minimum distance edge of the pervious area of the corresponding color resist is at least 2 micrometers, wherein the minimum distance edge is an edge of the corresponding color resist closest to the black matrix layer; and forming a transparent conductive layer on the color resist layer.
地址 Shenzhen, Guangdong CN