TSV formation

摘要

A device includes a substrate having a front side and a backside, the backside being opposite the front side. An isolation layer is disposed on the front side of the substrate, wherein first portions of isolation layer and the substrate are in physical contact. A through substrate via (TSV) extends from the front side to the backside of the substrate. An oxide liner is on a sidewall of the TSV. The oxide liner extends between second portions of the substrate and the isolation layer. A dielectric layer having a metal pad is disposed over the isolation layer on the front side of the substrate. The metal pad and the TSV are formed of a same material.

主权项

1. A device comprising:
a substrate having a front side and a backside, the backside being opposite the front side; an isolation layer on the front side of the substrate, wherein a first portion of the isolation layer and a first portion of the substrate are in physical contact; a through substrate via (TSV) extending from the front side to the backside of the substrate; an oxide liner extending along a sidewall of the TSV, wherein the oxide liner further extends between a second portion of the isolation layer and a second portion of the substrate, and wherein a top surface of the second portion of the isolation layer is non-planar; a dielectric layer over the isolation layer; and a metal pad in the dielectric layer over the TSV, wherein the metal pad and the TSV are formed of a same material.