| 发明名称 | Planarization process | ||
| 摘要 | Planarization processing methods are disclosed. In one aspect, the method includes patterning a material layer and planarizing the patterned material layer by using sputtering. Due to the patterning of the material layer, the loading requirements of nonuniformity on a substrate for sputtering the material layer are reduced, compared with that before the patterning. | ||
| 申请公布号 | US9633855(B2) | 申请公布日期 | 2017.04.25 |
| 申请号 | US201514722022 | 申请日期 | 2015.05.26 |
| 申请人 | Institute of Microelectronics, Chinese Academy of Sciences | 发明人 | Zhu Huilong |
| 分类号 | H01L21/3205;H01L21/4763;H01L21/28;H01L21/3105;H01L21/311;H01L21/321;H01L21/3213;H01L29/66;H01L21/768;C23C14/34;H01L21/8234 | 主分类号 | H01L21/3205 |
| 代理机构 | Knobbe, Martens, Olson & Bear, LLP | 代理人 | Knobbe, Martens, Olson & Bear, LLP |
| 主权项 | 1. A method of planarizing a material layer formed on a substrate, comprising: patterning the material layer, wherein the patterning is stopped near a substantially lowest portion of a top surface of the material layer to leave some protrusions above the lowest portion of the top surface; and planarizing the patterned material layer by sputtering, wherein the, patterning of the material layer results in a loading condition for the sputtering on the material layer having a lower non-uniformity across the substrate than that before the patterning. | ||
| 地址 | Beijing CN | ||