发明名称 |
Rinse solution for pattern formation and pattern forming process |
摘要 |
In a resist pattern forming process, a rinse solution comprising (A) a heat/acid-decomposable polymer and (B) water is effective. The pattern forming process using the rinse solution is successful in forming fine feature size patterns while minimizing the occurrence of pattern collapse. High-throughput processing is possible. |
申请公布号 |
US9632416(B2) |
申请公布日期 |
2017.04.25 |
申请号 |
US201514952669 |
申请日期 |
2015.11.25 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
Hatakeyama Jun;Kori Daisuke;Ogihara Tsutomu |
分类号 |
G03F7/40;G03F7/32;G03F7/039;G03F7/11 |
主分类号 |
G03F7/40 |
代理机构 |
Westerman, Hattori, Daniels & Adrian, LLP |
代理人 |
Westerman, Hattori, Daniels & Adrian, LLP |
主权项 |
1. A rinse solution for pattern formation comprising (A) a heat/acid-decomposable polymer and (B) water;
wherein the heat/acid-decomposable polymer comprises recurring units having the formula (1) or (2):wherein R1, R2, and R3 are each independently hydrogen or an optionally substituted, C1-C30 saturated or unsaturated, monovalent organic group, and W is a C2-C30 saturated or unsaturated, divalent organic group. |
地址 |
Tokyo JP |