Integration of photonic, electronic, and sensor devices with SOI VLSI microprocessor technology

摘要

According to an aspect of the present principles, methods are provided for fabricating an integrated structure. A method includes forming a very large scale integration (VLSI) structure including a semiconductor layer at a top of the VLSI structure. The method further includes mounting the VLSI structure to a support structure. The method additionally includes removing at least a portion of the semiconductor layer from the VLSI structure. The method also includes attaching an upper layer to the top of the VLSI structure. The upper layer is primarily composed of a material that has at least one of a higher resistivity or a higher transparency than the semiconductor layer. The upper layer includes at least one hole for at least one of a photonic device or an electronic device. The method further includes releasing said VLSI structure from the support structure.

主权项

1. A method for fabricating an integrated structure comprising:
forming a very large scale integration (VLSI) structure including a semiconductor layer at a top of the VLSI structure; mounting the VLSI structure to a support structure; removing at least a portion of the semiconductor layer from the VLSI structure; attaching an upper layer to the top of the VLSI structure, wherein said upper layer is primarily composed of a material that has at least one of a higher resistivity or a higher transparency than said semiconductor layer and said upper layer includes at least one hole for at least one of a photonic device or an electronic device; and releasing said VLSI structure from the support structure.