发明名称 Bias circuit having reduced power consumption
摘要 A depletion mode FET having a source electrode connected to ground; and a bias circuit for producing a bias current for a gate electrode of the FET. The bias circuit includes a pair of source follower transistors circuits; a first one of the pair of two source follower transistor circuits being coupled between a first voltage supply having a first polarity relative to the ground potential and a second voltage supply having a second polarity relative to ground potential, the first polarity being opposite to the second polarity, the first one of the pair of the source follower transistor circuits supplying a control signal to a second one of the pair of source follower transistor circuits. The second one of the pair of source follower transistors circuits is coupled between the second voltage supply and the ground potential and wherein the second one of the pair of source follower transistor circuits produces a bias signal for the control electrode of the output transistor.
申请公布号 US9634613(B1) 申请公布日期 2017.04.25
申请号 US201615073853 申请日期 2016.03.18
申请人 Raytheon Company 发明人 Watters Edward A.;Laighton Christopher M.;Bettencourt John P.
分类号 H03F3/04;H03F1/02;H03F3/193;H03F1/30 主分类号 H03F3/04
代理机构 Daly, Crowley, Mofford & Durkee, LLP 代理人 Daly, Crowley, Mofford & Durkee, LLP
主权项 1. A circuit, comprising: an output transistor, the output transistor having a control electrode for controlling a flow of carriers between a first electrode and a second electrode, the second electrode is connected to ground potential; and a bias circuit, comprising: a pair of source follower transistors circuits; a first one of the pair of two source follower transistor circuits being coupled between a first voltage supply having a first polarity relative to the ground potential and a second voltage supply having a second polarity relative to ground potential, the first polarity being opposite to the second polarity, the first one of the pair of the source follower transistor circuits supplying a control signal to a second one of the pair of source follower transistor circuits;wherein the second one of the pair of source follower transistors circuits is coupled between the second voltage supply and the ground potential and wherein the second one of the pair of source follower transistor circuits produces a bias signal for the control electrode of the output transistor.
地址 Waltham MA US