发明名称 |
Method of manufacturing display panel |
摘要 |
A method of manufacturing a display panel having a plurality of lightly doped drain thin film transistors arranged as a matrix includes forming a semiconductor pattern with a predetermined shape on a substrate; forming a dielectric layer covering the semiconductor pattern on the substrate; forming a metal layer on the dielectric layer; forming a photoresist patterns smaller than the semiconductor pattern on the metal layer above the semiconductor pattern; etching the metal layer to form a gate electrode smaller than the photoresist pattern; doping high concentration ions by using the photoresist pattern as a mask to form a pair of highly doped regions on the semiconductor pattern not covered by the photoresist pattern; removing the photoresist pattern; and doping low concentration ions by using the gate electrode as a mask to form a pair of lightly doped regions between the highly doped regions and a part of the semiconductor pattern. |
申请公布号 |
US9634121(B2) |
申请公布日期 |
2017.04.25 |
申请号 |
US201414413161 |
申请日期 |
2014.01.24 |
申请人 |
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD |
发明人 |
Dai Tianming |
分类号 |
H01L21/00;H01L27/15;H01L29/66;H01L29/786;H01L27/12 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a display panel having a plurality of lightly doped drain thin film transistors arranged as a matrix, the method comprising:
providing a substrate; forming a semiconductor pattern with a predetermined shape on the substrate; forming a dielectric layer covering the semiconductor pattern on the substrate; forming a metal layer on the dielectric layer; forming a photoresist patterns smaller than the semiconductor pattern on the metal layer right above the semiconductor pattern; etching the metal layer to form a gate electrode smaller than the photoresist pattern; doping high concentration ions by using the photoresist pattern as a mask to form a pair of highly doped regions on the semiconductor pattern not covered by the photoresist pattern; removing the photoresist pattern; and doping low concentration ions by using the gate electrode as a mask to form a pair of lightly doped regions between the highly doped regions and a part of the semiconductor pattern covered by the gate electrode; wherein a center of the gate electrode is aligned with a center of the photoresist pattern, and two opposite edges of the gate electrode is concaved inwards a preset horizontal distance relative to two opposite edges of the photoresist pattern. |
地址 |
Shenzhen CN |