Solid-state image pickup device and method of driving the same

摘要

A solid-state image pickup device includes: a photoelectric conversion element including a charge accumulation region, the photoelectric conversion element performing photoelectric conversion on incident light and accumulating, in the charge accumulation region, electric charge obtained through the photoelectric conversion; a charge-voltage conversion element accumulating the electric charge obtained through the photoelectric conversion; and a charge accumulation element adjacent to the photoelectric conversion element, part or all of the charge accumulation element overlapping the charge accumulation region, and the charge accumulation element adding capacitance to capacitance of the charge-voltage conversion element.

主权项

1. An image sensor, comprising:
a semiconductor substrate, including: a plurality of photoelectric conversion elements, which includes at least a first photoelectric conversion element and a second photoelectric conversion element; a charge-voltage conversion element, wherein the charge-voltage conversion element is shared by the first photoelectric conversion element and second photoelectric conversion element; a first transfer transistor connected between the first photoelectric conversion element and the charge-voltage conversion element; a second transfer transistor connected between the second photoelectric conversion element and the charge-voltage conversion element; a first charge accumulation element, wherein at least a portion of the first charge accumulation element overlaps a charge accumulation region of the first photoelectric conversion element; and a second charge accumulation element, wherein at least a portion of the second charge accumulation element overlaps a charge accumulation region of the second photoelectric conversion element, wherein each of the plurality of photoelectric conversion elements is configured to receive light entered from a first surface of the semiconductor substrate, and wherein the first and second charge accumulation elements are disposed on a second surface of the semiconductor substrate, the second surface is opposed to the first surface.