Special construct for continuous non-uniform RX FinFET standard cells

摘要

Methods for abutting two cells with different sized diffusion regions and the resulting devices are provided. Embodiments include abutting a first cell having first drain and source diffusion regions and a second cell having second drain and source diffusion regions, larger than the first diffusion regions, by: forming a dummy gate at a boundary between the two cells; forming a continuous drain diffusion region having an upper portion crossing the dummy gate and encompassing the entire first drain diffusion region and part of the second drain diffusion region and having a lower portion beginning over the dummy gate and encompassing a remainder of the second drain diffusion region; forming a continuous source diffusion region that is the mirror image of the continuous drain diffusion region; and forming a poly-cut mask over the dummy gate between, but separated from, the continuous drain and source diffusion regions.

主权项

1. A device, comprising:
a first cell and a second cell adjacent the first cell; a dummy gate at a boundary between the first and second cells; a continuous drain diffusion region having an upper portion crossing the dummy gate and encompassing an entire drain diffusion region for the first cell and part of a drain diffusion region for the second cell and having a lower portion beginning over the dummy gate and encompassing a remainder of a drain diffusion region for the second cell; a continuous source diffusion region having a lower portion crossing the dummy gate and encompassing an entire source diffusion region for the first cell and part of a source diffusion region for the second cell and having an upper portion beginning over the dummy gate and encompassing a remainder of the source diffusion region for the second cell; and a poly-cut mask over the dummy gate between, but separated from, the continuous drain diffusion region and the continuous source diffusion region.