| 发明名称 | Silicon substrates with compressive stress and methods for production of the same | ||
| 摘要 | A heterostructure may include a substrate having a first primary surface, a second primary surface, and a diffusion layer extending a depth into the substrate from the first primary surface; and a deposition layer disposed on the second primary surface of the substrate. The heterostructure may further include an epitaxial layer disposed on the deposition layer. | ||
| 申请公布号 | US9633843(B2) | 申请公布日期 | 2017.04.25 |
| 申请号 | US201615192503 | 申请日期 | 2016.06.24 |
| 申请人 | Global Wafers Co., Ltd | 发明人 | Chang Yao-Chung;Ko Chia-Wen;Lin Manhsuan |
| 分类号 | H01L29/227;H01L21/04;H01L21/425;H01L21/265;H01L21/02;H01L21/324;H01L21/304;H01L29/20;H01L21/223;H01L21/225 | 主分类号 | H01L29/227 |
| 代理机构 | Osha Liang LLP | 代理人 | Osha Liang LLP |
| 主权项 | 1. A heterostructure comprising: a substrate having a first primary surface, a second primary surface, a diffusion layer extending a depth into the substrate from the entirety of the first primary surface, and a non-diffusion layer adjacent to the diffusion layer; and a deposition layer disposed on the second primary surface of the substrate; wherein the diffusion layer is p++ or n++ doped. | ||
| 地址 | Hsinchu TW | ||