发明名称 |
Vapor deposition of silicon-containing films using penta-substituted disilanes |
摘要 |
Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane. |
申请公布号 |
US9633838(B2) |
申请公布日期 |
2017.04.25 |
申请号 |
US201514979816 |
申请日期 |
2015.12.28 |
申请人 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
发明人 |
Girard Jean-Marc;Ko Changhee;Oshchepkov Ivan;Yanagita Kazutaka;Okubo Shingo;Noda Naoto;Gatineau Julien |
分类号 |
H01L21/02;C23C16/455;C23C16/40;C23C16/34;C23C16/24 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
McQueeney Patricia E. |
主权项 |
1. A thermal ALD method of depositing a silicon nitride film on a substrate, the method comprising:
a) Setting a reactor containing the substrate to a temperature ranging from approximately 450° C. to approximately 650° C. and a pressure ranging from approximately 0.1 to approximately 100 Torr (13 Pa to 1,333 Pa); b) Introducing a vapor of pentachlorodisilane into the reaction chamber to form a silicon-containing layer on the substrate; c) Reacting an nitrogen containing reactant with the silicon-containing layer to form a layer of the silicon nitride film having a thickness ranging from approximately 0.3 Å (0.03 nm) to approximately 2 Å (0.2 nm) and a refractive index ranging from approximately 1.8 to 2.1; and d) Repeating steps b) and c). |
地址 |
Paris FR |