Self-aligned nanogap fabrication

摘要

Disclosed herein is a method comprising: depositing a second electrode of each of a plurality of electrode pairs onto a substrate, through an opening of one or more resist layers; depositing a strip of a sacrificial layer directly on the second electrode through the same opening of the one or more resist layer; depositing a first electrode of each of the plurality of electrode pairs directly on the strip of the sacrificial layer through the same opening of the one or more resist layer; and forming a nanogap channel by removing the strip of the sacrificial layer; wherein the strip of the sacrificial layer is sandwiched between and in direct contact with the first electrode and the second electrode before the strip is removed, and wherein at least a portion of the first electrode directly faces at least a portion of the second electrode.

主权项

1. A method comprising:
depositing a second electrode of each of a plurality of electrode pairs onto a substrate, through an opening of one or more resist layers; depositing a strip of a sacrificial layer directly on the second electrode through the same opening of the one or more resist layer; depositing a first electrode of each of the plurality of electrode pairs directly on the strip of the sacrificial layer through the same opening of the one or more resist layer; and forming a nanogap channel by removing the strip of the sacrificial layer; wherein the strip of the sacrificial layer is sandwiched between and in direct contact with the first electrode and the second electrode before the strip is removed, and wherein at least a portion of the first electrode directly faces at least a portion of the second electrode, further comprising enlarging the opening by enlarging the one or more resist layers after the depositing the second electrode and prior to the depositing the first electrode.