Solid-state imaging device, production method of the same, and imaging apparatus

摘要

A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

主权项

1. An imaging device, comprising:
a semiconductor substrate having a first side and a second side, opposite the first side, as a light incident side; a plurality of transistors disposed at the first side of the semiconductor substrate; first and second neighboring photoelectric conversion regions disposed in the semiconductor substrate; wherein: the first and second photoelectric conversion regions share at least one first shared transistor from the plurality of transistors; each of the first and second photoelectric conversion regions comprises a respective impurity region adapted to produce charge in response to incident light; the plurality of transistors comprises first and second transfer transistors coupled to the first and second photoelectric conversion regions, respectively, the first and second transfer transistors being positioned to allow charge produced by the impurity regions of the respective first and second photoelectric conversion regions to be selectively transferred to a first floating diffusion shared by the first and second photoelectric conversion regions; and the impurity regions of the first and second photoelectric conversion regions are greater than or equal to one micrometer thick and less than or equal to five micrometers thick in a depth direction between the first and second sides of the semiconductor substrate.