Seamless metallization contacts

摘要

The present disclosure relates to semiconductor structures and, more particularly, to seamless metallization structures and methods of manufacture. A structure includes: a contact opening formed in an oxide material and in alignment with an underlying structure; a metal liner lining the sidewalls and bottom of the contact opening, in direct electrical contact with the underlying structure; a conductive liner on the metal liner, within the contact opening; and tungsten fill material on the conductive liner and within the contact opening.

主权项

1. A structure, comprising:
a contact opening formed in an oxide material and in alignment with an underlying substrate; a metal silicide at the bottom of the contact opening and in direct contact with the underlying substrate; a first liner at the bottom of the contact opening in direct contact with the oxide material at the bottom of the contact opening and in direct contact with a portion of the metal silicide at a sidewall of the contact opening, the first liner not being in direct contact with the metal silicide in a middle of the contact opening; a metal liner lining the sidewalls and bottom of the contact opening, in direct contact with a portion of the oxide material and in direct contact with a portion of the metal silicide in the middle of the contact opening; and tungsten fill material within the contact opening.