Semiconductor device and method of manufacturing semiconductor device

摘要

According to one embodiment, there is provided a semiconductor device, which includes an electrode lead-out part, a planarization film, contacts, and first and second columnar patterns. The electrode lead-out part is arranged such that an electrode film and an insulating film are alternately stacked in a plurality of layers, and layers of the electrode film are arranged stepwise. The planarization film is arranged above the electrode lead-out part. The first columnar pattern extends from a lowermost portion of the electrode lead-out part to a position lower than the upper side of the planarization film by a first depth. The second columnar pattern extends from a lowermost portion of the electrode lead-out part to a position lower than the upper side of the planarization film by a second depth larger than the first depth.

主权项

1. A semiconductor device comprising:
an electrode lead-out part arranged such that an electrode film and a first insulating film are alternately stacked in a plurality of layers above a substrate, layers of the electrode film being arranged stepwise to be longer gradually toward a lower side; a planarization film including a second insulating film and arranged above the electrode lead-out part; contacts made of a conductive material and extending from an upper side of the planarization film to the layers of the electrode film, respectively; and a plurality of columnar patterns arranged in the electrode lead-out part, wherein the plurality of columnar patterns include
a first columnar pattern extending from a lowermost portion of the electrode lead-out part to a position lower than the upper side of the planarization film by a first depth, anda second columnar pattern extending from a lowermost portion of the electrode lead-out part to a position lower than the upper side of the planarization film by a second depth larger than the first depth.