| 发明名称 | Package structure and method for forming the same | ||
| 摘要 | A package structure and method for forming the same are provided. The package structure includes a substrate and a semiconductor die formed over the substrate. The package structure also includes a package layer covering the semiconductor die and a conductive structure formed in the package layer. The package structure includes a first insulating layer formed on the conductive structure, and the first insulating layer includes monovalent metal oxide. A second insulating layer is formed between the first insulating layer and the package layer. The second insulating layer includes monovalent metal oxide, and a weight ratio of the monovalent metal oxide in the second insulating layer is greater than a weight ratio of the monovalent metal oxide in first insulating layer. | ||
| 申请公布号 | US9633924(B1) | 申请公布日期 | 2017.04.25 |
| 申请号 | US201514971132 | 申请日期 | 2015.12.16 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Yu Chen-Hua;Lin Jing-Cheng;Fu Tsei-Chung |
| 分类号 | H01L23/00;H01L23/31;H01L23/528;H01L23/532;H01L21/56;H01L21/768;H01L21/3205;H01L21/02 | 主分类号 | H01L23/00 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A package structure, comprising: a substrate; a semiconductor die formed over the substrate; a package layer adjacent to the semiconductor die; a conductive structure formed in the package layer; a first insulating layer formed on the conductive structure, wherein the first insulating layer comprises monovalent metal oxide; and a second insulating layer formed between the first insulating layer and the package layer, wherein the second insulating layer comprises the monovalent metal oxide, and wherein a weight ratio of the monovalent metal oxide in the second insulating layer is greater than a weight ratio of the monovalent metal oxide in the first insulating layer. | ||
| 地址 | Hsin-Chu TW | ||