发明名称 |
Method of manufacturing organic light emitting display panel |
摘要 |
A method of manufacturing an organic light emitting display panel, the method including: providing a pixel defined by an intersection of one of a plurality of data lines and one of a plurality of gate lines, the providing the pixel including: providing a transistor, providing a storage capacitor including: a first electrode, and a second electrode, and providing a semiconductor layer, providing a first plate partially overlapping the semiconductor layer in the pixel, the providing a first plate including: providing a gate portion of the transistor, and providing a capacitor-forming portion including the first electrode of the storage capacitor, and providing a second plate on the first plate in the pixel, the second plate including the second electrode of the storage capacitor, the second plate not overlapping the semiconductor layer. |
申请公布号 |
US9634294(B2) |
申请公布日期 |
2017.04.25 |
申请号 |
US201615227139 |
申请日期 |
2016.08.03 |
申请人 |
LG Display Co., Ltd. |
发明人 |
Jung Kyoung-June;Yeo Donghyun |
分类号 |
H01L21/00;H01L51/56;H01L27/32 |
主分类号 |
H01L21/00 |
代理机构 |
Morgan, Lewis & Bockius LLP |
代理人 |
Morgan, Lewis & Bockius LLP |
主权项 |
1. A method of manufacturing an organic light emitting display panel, the method comprising:
providing a pixel defined by an intersection of one of a plurality of data lines and one of a plurality of gate lines, the providing the pixel comprising:
providing a transistor;providing a storage capacitor comprising:
a first electrode; anda second electrode; andproviding a semiconductor layer; providing a first plate partially overlapping the semiconductor layer in the pixel, the providing a first plate comprising:
providing a gate portion of the transistor; andproviding a capacitor-forming portion comprising the first electrode of the storage capacitor; and providing a second plate on the first plate in the pixel, the second plate comprising the second electrode of the storage capacitor, the second plate not overlapping the semiconductor layer. |
地址 |
Seoul KR |