发明名称 Nanostructure layer and light emitting diode with the same
摘要 A nanostructure layer includes a number of nanostructures, wherein the number of nanostructures are aligned along a number of straight lines, a size of each of the number of nanostructures ranges from about 20 nanometers to about 100 nanometers, a distance between adjacent two nanostructures ranges from about 10 nanometers to about 300 nanometers, and each of the number of nanostructures includes a core and a shell coated on the core. A light emitting diode with the nanostructure layer is also provided.
申请公布号 US9634196(B2) 申请公布日期 2017.04.25
申请号 US201414549565 申请日期 2014.11.21
申请人 Tsinghua University;HON HAI PRECISION INDUSTRY CO., LTD. 发明人 Jin Yuan-Hao;Li Qun-Qing;Fan Shou-Shan
分类号 H01L33/58;B32B3/10;B82Y20/00;H01L33/42 主分类号 H01L33/58
代理机构 代理人 Reiss Steven
主权项 1. A nanostructure layer comprising a plurality of nanostructures, wherein the plurality of nanostructures are aligned along a plurality of straight lines, the plurality of nanostructures are spaced from each other; a size of each of the plurality of nanostructures ranges from about 20 nanometers to about 100 nanometers, a distance between adjacent two nanostructures ranges from about 10 nanometers to about 300 nanometers; each of the plurality of nanostructures comprises a core and a shell coated on the core, a material of the core comprises metal oxide, a material of the shell is dielectric, the core is completely surrounded by the shell, and the core and the shell are integrated to form an integrated structure; and a dielectric constant ∈0 of each of the plurality of nanostructures is between a dielectric constant ∈1 of the material of the core and a dielectric constant ∈2 of the material of the shell.
地址 Beijing CN