Semiconductor devices with integrated hole collectors

摘要

Transistor devices which include semiconductor layers with integrated hole collector regions are described. The hole collector regions are configured to collect holes generated in the transistor device during operation and transport them away from the active regions of the device. The hole collector regions can be electrically connected or coupled to the source, the drain, or a field plate of the device. The hole collector regions can be doped, for example p-type or nominally p-type, and can be capable of conducting holes but not electrons.

主权项

1. A transistor device, comprising:
a source, a gate, and a drain; a semiconductor material which includes a gate region between the source and the drain; a channel in the semiconductor material; an insulating material between the gate and the semiconductor material; and a field plate over the insulating material; wherein an electrically conductive portion extending from the source or from the field plate contacts the semiconductor material in the gate region; and wherein the transistor device is an enhancement-mode transistor.