发明名称 |
Digital x-ray detector and method for repairing a bad pixel thereof |
摘要 |
Provided herein is a digital x-ray detector and a method for repairing a bad pixel thereof, the detector including a substrate; a gate line and a data line formed on the substrate such that the gate line and the data line intersect each other to form a pixel domain; a thin film transistor formed within the pixel domain such that the thin film transistor is adjacent to a portion where the gate line and the data line intersect each other, the thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode; a PIN diode which is formed within the pixel domain and which includes a lower electrode connected to the source electrode of the thin film transistor, a PIN layer formed on the lower electrode, and an upper electrode formed on the PIN layer; a bias line connected to the upper electrode of the PIN diode; and a scintillator arranged above the PIN diode, wherein on at least one of a surface of the drain electrode which faces the PIN diode and a surface of the PIN diode which faces the drain electrode, a groove is formed such that it expands a distance between the drain electrode and the PIN diode. |
申请公布号 |
US9634056(B2) |
申请公布日期 |
2017.04.25 |
申请号 |
US201514700752 |
申请日期 |
2015.04.30 |
申请人 |
HYDIS TECHNOLOGIES CO., LTD. |
发明人 |
Ho Jang Jong |
分类号 |
H01L29/49;H01L27/146;H01L31/105 |
主分类号 |
H01L29/49 |
代理机构 |
Saliwanchik, Lloyd & Eisenschenk |
代理人 |
Saliwanchik, Lloyd & Eisenschenk |
主权项 |
1. A digital x-ray detector comprising:
a substrate; a gate line and a data line formed on the substrate such that the gate line and the data line intersect each other to form a pixel domain; a thin film transistor formed within the pixel domain such that the thin film transistor is adjacent to a portion where the gate line and the data line intersect each other, the thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode; a PIN diode which is formed within the pixel domain and which includes a lower electrode connected to the source electrode of the thin film transistor, a PIN layer formed on the lower electrode, and an upper electrode formed on the PIN layer; a bias line connected to the upper electrode of the PIN diode; and a scintillator arranged above the PIN diode, wherein on at least one of a surface of the drain electrode which faces the PIN diode and a surface of the PIN diode which faces the drain electrode, a groove is formed such that it expands a distance between the drain electrode and the PIN diode. |
地址 |
Gyeonggi-Do KR |