Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method

摘要

Provided is a method for producing SiC single crystals while maintaining a temperature gradient such that the temperature decreases from within an Si solution inside a graphite crucible toward the solution surface, with the SiC seed crystals that have contacted the solution surface serving as the starting point for crystal seed growth, wherein when the crystal growth surface of the SiC seed crystals, which serves as the starting point for SiC single crystal growth, contacts the solution surface, the height by which the solution rises to the side of the SiC seed crystals is within the range where the SiC single crystals that have grown from the crystal growth surface and the SiC single crystals that have grown from the side grow as one SiC single crystal unit. Also provided is a device for producing an SiC single crystal comprising a graphite crucible, a heating device for heating and melting base materials in the crucible to form a base material solution and maintaining a temperature gradient required for growth of SiC single crystal, a support rod which holds a SiC seed crystal at its bottom end, and a holding structure which maintains the holding by the support rod so that a height by which the solution rises to the side of the SiC seed crystal is within a range where the SiC single crystal that have grown from the crystal growth surface and the SiC single crystal that have grown from the side grow as one SiC single crystal unit.

主权项

1. A method of producing a SiC single crystal, in which a Si—C solution in a crucible is used to grow a SiC single crystal from a SiC seed crystal which has been brought into contact with a surface of the Si—C solution, comprising:
bringing the SiC seed crystal into contact with the solution surface and then pulling up the seed crystal, forming a meniscus between the seed crystal and the solution to obtain a wetting height of the solution to a side face of the SiC seed crystal is zero or within a range where a SiC single crystal which grows from a bottom face and a SiC single crystal which grows from the side face grow as an integral SiC single crystal, and growing the crystal in that state, wherein an angle formed by the meniscus and the side face of the seed crystal is 200 degrees or less.