| 发明名称 | Bulk acoustic wave resonator | ||
| 摘要 | Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit. | ||
| 申请公布号 | US9634643(B2) | 申请公布日期 | 2017.04.25 |
| 申请号 | US201213691114 | 申请日期 | 2012.11.30 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Shin Jea Shik;Kim Duck Hwan;Kim Chul Soo;Son Sang Uk;Song In Sang;Lee Moon Chul |
| 分类号 | H01L41/08;H03H9/17;H03H3/02;H03H9/02 | 主分类号 | H01L41/08 |
| 代理机构 | NSIP Law | 代理人 | NSIP Law |
| 主权项 | 1. A bulk acoustic wave resonator (BAWR), comprising: a bulk acoustic wave resonance unit comprising a first electrode,a second electrode, anda piezoelectric layer disposed between the first electrode and the second electrode; an air gap disposed below the resonance unit; an air edge formed at a distance from a center of the bulk acoustic wave resonance unit; and a bridge, disposed on an area excluding a portion where the air edge is formed near an edge of the bulk acoustic wave resonance unit, that supports the bulk acoustic wave resonance unit. | ||
| 地址 | Suwon-si KR | ||