| 发明名称 | Voltage boost circuit | ||
| 摘要 | A voltage boost circuit for eDram using thin oxide field effect transistors (FETs) is disclosed. The voltage boost circuit includes a boost capacitor which is precharged with a precharge voltage in a precharge stage and which provides a boosted supply voltage to a thin oxide FET during a pump phase. The voltage boost circuit further include a drive capacitor which provides a turn on voltage to the thin oxide FET so that the boosted supply voltage can pass to an output node in the pump phase. | ||
| 申请公布号 | US9634557(B2) | 申请公布日期 | 2017.04.25 |
| 申请号 | US201414327915 | 申请日期 | 2014.07.10 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Fifield John A.;Pontius Dale E. |
| 分类号 | H02M3/07;H02M3/158 | 主分类号 | H02M3/07 |
| 代理机构 | Roberts Mlotkowski Safran Cole & Calderon, P.C. | 代理人 | Meyers Steven;Calderon Andrew M.;Roberts Mlotkowski Safran Cole & Calderon, P.C. |
| 主权项 | 1. A voltage boost circuit, comprising: a boost capacitor which is precharged with a precharge voltage in a precharge stage and which provides a boosted supply voltage to a thin oxide FET during a pump phase; and a drive capacitor which provides a turn on voltage to the thin oxide FET so that the boosted supply voltage can pass to an output node in the pump phase. | ||
| 地址 | Armonk NY US | ||