Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes memory blocks each configured to comprise a pair of channels, each channel including a pipe channel formed in a pipe gate of the memory block and a drain-side channel and a source-side channel coupled to the pipe channel; first slits placed between the memory blocks adjacent to other memory blocks; and a second slit placed between the source-side channel and the drain-side channel of each pair of channels.

主权项

1. A semiconductor device, comprising:
memory blocks each configured to comprise a pipe gate and channels, each channel including a pipe channel formed in the pipe gate and a pair of a drain-side channel and a source-side channel coupled to the pipe channel; insulating layers placed between the memory blocks adjacent to other memory blocks, and interposed between pipe gates of the memory blocks to insulate the pipe gates from each other; first slits placed between the memory blocks adjacent to other memory blocks and placed above the insulating layers; and a second slit placed between the source-side channel and the drain-side channel of each pair of channels; third slits placed between the drain-side channels adjacent to other drain-side channels and formed to generally the same depth as drain select lines, wherein the drain select lines of the drain-side channels adjacent to other drain-side channels are separated from each other by the third slits interposed therebetween, and the drain-side channels adjacent to each other share a drain-side word line; and fourth slits placed between the source-side channels adjacent to other source-side channels and formed to generally the same depth as source select lines, wherein the source select lines of the source-side channels adjacent to other source-side channels are separated from each other by the fourth slits interposed therebetween, and the source-side channels adjacent to each other share a source-side word line.