Memory systems and memory programming methods

摘要

Memory systems and memory programming methods are described. According to one aspect, a memory system includes program circuitry configured to provide a program signal to a memory cell to program the memory cell from a first memory state to a second memory state, detection circuitry configured to detect the memory cell changing from the first memory state to the second memory state during the provision of the program signal to the memory cell to program the memory cell, and wherein the program circuitry is configured to alter the program signal as a result of the detection and to provide the altered program signal to the memory cell to continue to program the memory cell from the first memory state to the second memory state.

主权项

1. A memory system comprising:
a program circuit configured to provide a plurality of program signals to a memory cell during a programming operation of the memory cell to program the memory cell from a first memory state to a second memory state which is different than the first memory state; wherein the program circuit is configured to:
use a first voltage to provide a first of the program signals to the memory cell during the programming operation to change the memory cell from a low resistance state corresponding to the first memory state to a high resistance state corresponding to the second memory state; andafter the change of the memory cell from the low resistance state to the high resistance state, use a second voltage which is different than the first voltage to provide a second of the program signals to the memory cell during the programming operation to continue to program the memory cell wherein the memory cell is able to retain the high resistance state after the programming operation.