Apparatus for dielectric deposition process

摘要

An apparatus comprises a first gas inlet coupled between a first pipe and a reaction chamber, wherein the first pipe configured to carry process gases, a second gas inlet coupled between a second pipe and the reaction chamber, wherein the second pipe configured to carry a precursor material in a gaseous state and a heating device coupled to the second pipe and the second gas inlet, wherein the heating device keeps an ambient temperature of the second pipe and the second gas inlet above a boiling point of the precursor material.

主权项

1. A structure comprising:
a first gas inlet in a manifold and coupled between a first pipe and a reaction chamber, wherein the first pipe is connected to a first gas input terminal on a top surface of the manifold, wherein the first pipe is configured to carry process gases, wherein the manifold has a first side outside the reaction chamber and a second side inside the reaction chamber; a second gas inlet in the manifold and coupled between a second pipe and the reaction chamber, wherein the second pipe is connected to a second gas input terminal on a top surface of the manifold and configured to carry a precursor material in a gaseous state; and a heating device in the manifold and coupled to the second pipe and the second gas inlet, wherein the heating device keeps an ambient temperature of the second pipe and the second gas inlet above a boiling point of the precursor material and wherein in order to prevent the process gases from cooling down the precursor material in the second pipe and the second gas inlet, the first pipe, the first gas inlet, the second pipe and the second gas inlet are configured such that a distance between the first gas inlet and the second gas inlet is greater than a distance between the first gas input terminal and the second gas input terminal, and wherein the first pipe and the second pipe are spaced apart and symmetrical with respect to a center line between the first gas inlet and the second gas inlet.