Method for patterning of laminated magnetic layer

摘要

A microelectronic device is formed by forming a stack of alternating layers of a magnetic material and a dielectric material. An etch mask is formed over the magnetic laminate layer. An aqueous wet etch including 5 percent to 10 percent nitric acid, 0.5 percent to 2 percent sulphuric acid, and 0.5 percent to 3 percent hydrofluoric acid is used to etch the magnetic laminate layer where exposed by the etch mask to form a patterned magnetic laminate layer. An optional adhesion layer, if present, is also removed by the aqueous wet etch solution where exposed by the etch mask. The etch mask is subsequently removed.

主权项

1. A method of forming a microelectronic device, comprising the steps:
providing a substrate comprising a dielectric material; forming a magnetic laminate layer over the substrate, the magnetic laminate layer comprising at least two layers of magnetic material alternating with at least one layer of dielectric material, wherein the magnetic material in the magnetic laminate layer includes at least 80 percent cobalt, at least 1 percent tantalum and at least 1 percent zirconium; forming an etch mask over the magnetic laminate layer; removing the magnetic laminate layer in areas exposed by the etch mask using an aqueous wet etch solution comprising nitric acid, sulphuric acid, hydrofluoric acid, and deionized water, to form a patterned magnetic laminate layer; and subsequently removing the etch mask.