Method for metal gate surface clean

摘要

The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

主权项

1. A method comprising:
providing a metal gate with a material layer disposed thereover; removing a portion of the material layer to form a trench, a surface of the metal exposed in the trench being oxidized to form a first oxide layer on the metal gate; removing the first oxide layer; forming a second oxide layer on the metal gate; and reducing the second oxide layer to a metal included in the metal gate using a reducing agent.