发明名称 Read retry operations where likelihood value assignments change sign at different read voltages for each read retry
摘要 Read retry operations in a memory employ likelihood value assignments that change sign at different read voltages for a plurality of read retry operations. A method for multiple read retries of a memory comprises reading a codeword using a first read voltage to obtain a first read value; mapping the first read value to first likelihood values based on a first likelihood value assignment that changes sign substantially at the first read voltage; reading the codeword using a second read voltage to obtain a second read value, wherein the second read voltage is shifted from the first read voltage to compensate for an expected change in analog voltages; and mapping the second read value to second likelihood values based on a second likelihood value assignment, wherein the second likelihood value assignment changes sign substantially at the second read voltage. Read data is optionally generated using iterative decoding of the codeword based on the first likelihood values and/or the second likelihood values.
申请公布号 US9633740(B1) 申请公布日期 2017.04.25
申请号 US201615041501 申请日期 2016.02.11
申请人 Seagate Technology LLC 发明人 Alhussien AbdelHakim S.;Sankaranarayanan Sundararajan;Nguyen Thuy Van;Danjean Ludovic;Haratsch Erich F.
分类号 G11C16/26;G11C16/28;G11C16/16;G11C16/34;H03M13/11 主分类号 G11C16/26
代理机构 Ryan, Mason & Lewis, LLP 代理人 Ryan, Mason & Lewis, LLP
主权项 1. A method for multiple read retries of a memory, comprising: reading a codeword from the memory using a first read voltage to obtain a first read value; mapping the first read value to one or more first likelihood values based on a first likelihood value assignment that assigns a likelihood value to each of a plurality of possible decision regions of read voltages, wherein the first likelihood value assignment changes sign substantially at the first read voltage; reading the codeword of the memory using a second read voltage to obtain a second read value, wherein the second read voltage is shifted from the first read voltage to compensate for an expected change in one or more analog voltages of one or more memory cells of the memory; and mapping the second read value to one or more second likelihood values based on a second likelihood value assignment that assigns a likelihood value to each of the plurality of possible decision regions of read voltages, wherein the second likelihood value assignment changes sign substantially at the second read voltage.
地址 Cupertino CA US