发明名称 |
High-voltage-tolerant pull-up resistor circuit |
摘要 |
A pull-up resistor circuit is provided for an IC, including a voltage source, a voltage output for providing a first voltage to supply power for providing a second voltage for an input/output (I/O) port of the IC, a first PMOS transistor, a second PMOS transistor and a control signal generator. The first PMOS transistor and the second PMOS transistor are connected in series to provide pull-up resistance, where the first PMOS transistor is coupled to a first control signal to control a pull-up function of the pull-up resistor circuit in a normal mode. Further, the control signal generator is for generating a second control signal coupled to the second PMOS transistor to control a bias voltage of the pull-up resistor circuit to prevent a reverse current from the voltage output to the voltage source under a high-voltage-tolerant mode when the second voltage is higher than the first voltage. |
申请公布号 |
US9634662(B2) |
申请公布日期 |
2017.04.25 |
申请号 |
US201414547319 |
申请日期 |
2014.11.19 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
Zhu Kai;Chen Jie;Weng Wenjun;Mo Shanyue;Guo Zhiguang |
分类号 |
H03K19/003;H03K19/0185 |
主分类号 |
H03K19/003 |
代理机构 |
Anova Law Group, PLLC |
代理人 |
Anova Law Group, PLLC |
主权项 |
1. A pull-up resistor circuit for an IC, comprising:
a voltage source for providing a source voltage to supply-power; a voltage output for providing an output voltage for an input/output (I/O) port of the IC; a first PMOS transistor and a second PMOS transistor connected in serial to provide a pull-up resistance, wherein the first PMOS transistor is coupled to a first control signal to control a pull-up function of the pull-up resistor circuit in a normal mode when the source voltage is higher than the output voltage; and a control signal generator for generating a second control signal coupled to the second PMOS transistor to control a bias voltage connected to a substrate of the second PMOS transistor and a substrate of the first PMOS transistor to prevent a reverse current from the voltage output to the voltage source under a high-voltage-tolerant mode regardless of a logic level of the first control signal when the output voltage is higher than the source voltage, a value of the bias voltage being a greater of the source voltage and the output voltage, wherein: the control signal generator includes a first switch unit including a third PMOS transistor having a width-to-length ratio related to an impedance of the first switch unit, and a second switch unit including a fourth PMOS transistor and a first NMOS transistor, a gate of the fourth PMOS transistor is connected to a drain of the fourth PMOS transistor and connected to a drain of the first NMOS transistor, a source of the fourth PMOS transistor is connected to the gate of the second PMOS transistor, a turn-on impedance of the second switch unit being higher than a turn-on impedance of the first switch unit, a gate of the first NMOS transistor is inputted with a third control signal and a signal level of the third control signal is always opposite to a signal level of the first control signal. |
地址 |
Shanghai CN |