发明名称 VERTICAL-TYPE ORGANIC LIGHT-EMITTING TRANSISTORS WITH REDUCED LEAKAGE CURRENT AND METHOD FOR FABRICATING THE SAME
摘要 A vertical-type organic light-emitting transistor for reducing the off-state leakage current to improve the current and on-off ratio includes a gate electrode, a lower semiconductor layer disposed on the gate electrode, a source electrode disposed on the lower semiconductor layer, and a source insulation film disposed on the source electrode and covering top and sides of the source electrode, wherein the lower semiconductor layer is configured such that an electric charge is injected into the lower semiconductor layer from the source electrode when voltage is applied to the gate electrode.
申请公布号 US2017110691(A1) 申请公布日期 2017.04.20
申请号 US201615132481 申请日期 2016.04.19
申请人 SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION 发明人 LEE Sin-Doo;LEE In-Ho;LEE Gyujeong
分类号 H01L51/52;H01L51/56 主分类号 H01L51/52
代理机构 代理人
主权项 1. An organic light-emitting transistor, comprising: a gate electrode; a lower semiconductor layer disposed on the gate electrode; a source electrode disposed on the lower semiconductor layer; and a source insulation film disposed on the source electrode and covering top and sides of the source electrode, wherein the lower semiconductor layer is configured such that an electric charge is injected into the lower semiconductor layer from the source electrode when voltage is applied to the gate electrode.
地址 Seoul KR