发明名称 |
PHOTOACTIVE DEVICES AND MATERIALS |
摘要 |
Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase. |
申请公布号 |
US2017110601(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201514885721 |
申请日期 |
2015.10.16 |
申请人 |
ASM IP HOLDING B.V. |
发明人 |
Blomberg Tom E.;Huotari Hannu |
分类号 |
H01L31/0232;H01L33/00;H01L33/58;H01L31/18 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
1. A vapor deposition process for depositing a layer in a photonic device, wherein the layer comprises a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase. |
地址 |
Almere NL |