发明名称 PHOTOACTIVE DEVICES AND MATERIALS
摘要 Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.
申请公布号 US2017110601(A1) 申请公布日期 2017.04.20
申请号 US201514885721 申请日期 2015.10.16
申请人 ASM IP HOLDING B.V. 发明人 Blomberg Tom E.;Huotari Hannu
分类号 H01L31/0232;H01L33/00;H01L33/58;H01L31/18 主分类号 H01L31/0232
代理机构 代理人
主权项 1. A vapor deposition process for depositing a layer in a photonic device, wherein the layer comprises a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.
地址 Almere NL